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BTB04-600SL
STANDARD 4A TRIAC
MAIN FEATURES
Symbol IT(RMS) VDRM / VRRM IGT(Q1) Value 4 600 10 Unit A V mA
G
A2
A1
A2
DESCRIPTION The BTB04-600SL 4 quadrants TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability sensitivity of 10mA.
A1 A2
G
TO-220AB
ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) ITSM I2t dI/dt IGM PG(AV) Tstg Tj Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns Peak gate Average gate power dissipation Storage junction temperature range Operating junction temperature range TO-220AB F = 50 Hz F = 60 Hz Tc = 105C t = 20 ms t = 16.7 ms tp = 10ms Repetitive F = 100Hz tp = 20s Tj = 125C Tj = 125C Value 4 35 38 6 50 4 0.5 -40 to +150 -40 to +125 A2s A/s A W C Unit A A
March 2002 - Ed: 1A
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BTB04-600SL
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol IGT (1) VD = 12V Test conditions RL = 30 Quadrant I - II - III IV VGT VGD IH(2) IL VD = 12V VD = VDRM IT = 100mA IG = 1.2IGT I - III - IV II dV/dt (2) (dV/dt)c (2) VD = 67% VDRM gate open Tj = 125C (dI/dt)c = 1.8A/ms Tj = 125C MIN. MIN. RL = 30 RL = 3.3k Tj = 125C ALL ALL MAX. MAX. MAX. MIN. MAX. MAX. Value 10 25 1.3 0.2 15 15 25 75 10 V/s V/s V V mA mA Unit mA
STATIC CHARACTERISTICS
Symbol VTM (2) VTO
(2)
Test Conditions ITM = 5A tp = 380s Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.
Value 1.5 0.85 100 5 1
Unit V V m A mA
Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1.
THERMAL RESISTANCE
Symbol Rth (j-c) Rth (j-a) Junction to case (AC) Junction to ambient Parameter Value 3 60 Unit C/W C/W
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BTB04-600SL
PRODUCT SELECTOR
Part Number BTB04-600SL Voltage 600V Sensitivity 10 mA Type Standard Package TO-220AB
ORDERING INFORMATION
BT
B
04
-
600
SL
S: SENSITIVITY = 10mA L: LIGHTING APPLICATION VOLTAGE: 600V
TRIAC SERIES INSULATION B: non insulated CURRENT: 4A
Fig. 1: Maximum power dissipation versus RMS on-state current
P(W)
5
=180
Fig. 2: RMS on-state current versus case temperature.
IT(RMS)(A)
5.0 4.5 4.0 3.5
=180
4
3
3.0 2.5
2
180
2.0 1.5
1
IT(RMS)(A)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
1.0 0.5 0.0 0 25 50 75 100 125
Tc(C)
3.5
4.0
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K = [Zth/Rth]
1.E+00
Fig. 4: On-state characteristics (maximum values)
ITM(A)
100
Tj=25C
Zth(j-c)
Tj=125C
1.E-01
Zth(j-a)
10
1.E-02
Tj max. : Vto = 0.85 V Rd = 100 mW
tp(s)
1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
1 0 1 2 3 4
VTM(V)
5 6 7
8
9
10
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BTB04-600SL
Fig. 5: Surge peak on-state current versus number of cycles.
ITSM(A)
40 35 30 25 20 15 10 5
Repetitive Tc=110C Non repetitive Tj initial=25C t=20ms
Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I2t.
ITSM(A), I2t (A2s)
1000
Tj initial=25C
100
dI/dt limitation: 50A/s
ITSM
10
It
Number of cycles
0 1 10 100 1000
tp(ms)
1 0.01 0.10 1.00 10.00
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25C]
3.0 2.5 2.0
IGT
Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0 1.8 1.6 1.4 1.2 1.0 0.8
1.5 1.0 0.5
IH & IL
0.6 0.4
Tj(C)
0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.2 0.0 0.1 1.0
dV/dt (V/s)
10.0 100.0
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125C]
8 7 6 5 4 3 2 1 0 25 50 75 100 125
Fig. 10: Relative variation of static dV/dt immunity versus junction temperature.
dV/dt [Tj] / dV/dt [Tj = 125C]
8
VD=VR=400V
7 6 5 4 3 2
Tj(C)
1 0 25 50
Tj(C)
75 100 125
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BTB04-600SL
PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. A
H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A
Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151
C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
16.4 typ.
0.645 typ.
2.6 typ.
0.102 typ.
OTHER INFORMATION
Ordering type BTB04-600SL Marking BTB04-600SL Package TO-220AB Weight 2.3 g Base qty 50 Packing mode Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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